Title :
Two-photon-absorption-based optical power monitor in silicon rib waveguides
Author :
Hsieh, I-wei ; Rong, Haisheng ; Paniccia, Mario
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Utilizing two-photon-absorption effect, we demonstrate an in-situ scheme for monitoring optical power using p-i-n diode in silicon rib-waveguides for integrated photonics circuits. We show that a responsivity of 5.9μA/mW2 can be reached with 15V reverse-bias for the square-law detector. An example of using such detectors for accurate waveguide propagation loss measurements is given.
Keywords :
elemental semiconductors; integrated optics; integrated optoelectronics; optical losses; optical waveguides; p-i-n diodes; photoexcitation; rib waveguides; silicon; two-photon processes; Si; integrated photonics circuits; optical power monitor; p-i-n diode; silicon rib waveguides; square-law detector; two-photon-absorption; waveguide propagation loss; Current measurement; Nonlinear optics; Optical device fabrication; Optical variables measurement; Optical waveguides; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643336
