• DocumentCode
    3202562
  • Title

    Two-photon-absorption-based optical power monitor in silicon rib waveguides

  • Author

    Hsieh, I-wei ; Rong, Haisheng ; Paniccia, Mario

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    326
  • Lastpage
    328
  • Abstract
    Utilizing two-photon-absorption effect, we demonstrate an in-situ scheme for monitoring optical power using p-i-n diode in silicon rib-waveguides for integrated photonics circuits. We show that a responsivity of 5.9μA/mW2 can be reached with 15V reverse-bias for the square-law detector. An example of using such detectors for accurate waveguide propagation loss measurements is given.
  • Keywords
    elemental semiconductors; integrated optics; integrated optoelectronics; optical losses; optical waveguides; p-i-n diodes; photoexcitation; rib waveguides; silicon; two-photon processes; Si; integrated photonics circuits; optical power monitor; p-i-n diode; silicon rib waveguides; square-law detector; two-photon-absorption; waveguide propagation loss; Current measurement; Nonlinear optics; Optical device fabrication; Optical variables measurement; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643336
  • Filename
    5643336