Title :
Franz-Keldysh effect in germanium p-i-n photodetectors on silicon
Author :
Schmid, M. ; Oehme, M. ; Kaschel, M. ; Werner, J. ; Kasper, E. ; Schulze, J.
Author_Institution :
Inst. fur Halbleitertechnik (IHT), Univ. of Stuttgart, Stuttgart, Germany
Abstract :
Ge on Si p-i-n photodetectors were grown by molecular beam epitaxy minimizing tensile strain. The slope of the absorption curve changes by a factor of 2 under varying voltages due to the clearly observable Franz-Keldysh-Effect.
Keywords :
elemental semiconductors; germanium; molecular beam epitaxial growth; p-i-n photodiodes; silicon; tensile strength; Franz-Keldysh effect; Ge; Si; absorption curve; germanium p-i-n photodetectors; molecular beam epitaxial growth; silicon; tensile strain; Absorption; Photodetectors; Photonic band gap; Photonics; Semiconductor device measurement; Silicon; Temperature measurement; Franz-Keldysh-Effect; Ge detectors; Photonics; molecular beam epitaxy;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643337
