• DocumentCode
    3202574
  • Title

    Franz-Keldysh effect in germanium p-i-n photodetectors on silicon

  • Author

    Schmid, M. ; Oehme, M. ; Kaschel, M. ; Werner, J. ; Kasper, E. ; Schulze, J.

  • Author_Institution
    Inst. fur Halbleitertechnik (IHT), Univ. of Stuttgart, Stuttgart, Germany
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    329
  • Lastpage
    331
  • Abstract
    Ge on Si p-i-n photodetectors were grown by molecular beam epitaxy minimizing tensile strain. The slope of the absorption curve changes by a factor of 2 under varying voltages due to the clearly observable Franz-Keldysh-Effect.
  • Keywords
    elemental semiconductors; germanium; molecular beam epitaxial growth; p-i-n photodiodes; silicon; tensile strength; Franz-Keldysh effect; Ge; Si; absorption curve; germanium p-i-n photodetectors; molecular beam epitaxial growth; silicon; tensile strain; Absorption; Photodetectors; Photonic band gap; Photonics; Semiconductor device measurement; Silicon; Temperature measurement; Franz-Keldysh-Effect; Ge detectors; Photonics; molecular beam epitaxy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643337
  • Filename
    5643337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202574