• DocumentCode
    3202647
  • Title

    Highly oriented ErxY2−xSiO5 crystalline thin films fabricated by pulsed laser deposition

  • Author

    Isshiki, H. ; Tanaka, Y. ; Iwatani, K. ; Nakajima, T. ; Kimura, T.

  • Author_Institution
    Grad. Sch. of Inf. & Eng., Univ. of Electro-Commun. (UEC), Tokyo, Japan
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    311
  • Lastpage
    313
  • Abstract
    We propose layer-by-layer deposition approach to fabricate ErxY2-xSiO5 crystalline thin films. Highly oriented ErxY2-xSiO5 thin films with high crystallinity have been obtained by rapid thermal annealing (RTA) crystallization following pulsed-laser deposition (PLD).
  • Keywords
    crystallisation; erbium compounds; pulsed laser deposition; rapid thermal annealing; thin films; yttrium compounds; ErYSiO5; crystalline thin films; crystallization; layer-by-layer deposition approach; pulsed laser deposition; pulsed-laser deposition; rapid thermal annealing; Annealing; Crystallization; Erbium; Grain size; Silicon; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643342
  • Filename
    5643342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202647