• DocumentCode
    3202703
  • Title

    Photoluminescence and electroluminescence from B-doped nanocrystal Si/SiO2 multilayers

  • Author

    Sun, Hongcheng ; Liu, Yu ; Xu, Jun ; Li, Wei ; Lin, Tao ; Xu, Wei ; Chen, Kunji

  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    299
  • Lastpage
    301
  • Abstract
    B-doped nc-Si/SiO2 multilayers were formed using a PECVD system with subsequent thermal annealing. Room temperature photoluminescence and electroluminescence was investigated and compared with that of undoped nc-Si/SiO2 samples.
  • Keywords
    annealing; boron; electroluminescence; elemental semiconductors; multilayers; nanofabrication; nanostructured materials; photoluminescence; plasma CVD; semiconductor growth; silicon; silicon compounds; PECVD; Si:B-SiO2; boron-doped nanocrystal multilayers; electroluminescence; room temperature photoluminescence; temperature 293 K to 298 K; thermal annealing; Annealing; Doping; Films; Nanocrystals; Nonhomogeneous media; Photoluminescence; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643346
  • Filename
    5643346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202703