DocumentCode :
3202703
Title :
Photoluminescence and electroluminescence from B-doped nanocrystal Si/SiO2 multilayers
Author :
Sun, Hongcheng ; Liu, Yu ; Xu, Jun ; Li, Wei ; Lin, Tao ; Xu, Wei ; Chen, Kunji
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
299
Lastpage :
301
Abstract :
B-doped nc-Si/SiO2 multilayers were formed using a PECVD system with subsequent thermal annealing. Room temperature photoluminescence and electroluminescence was investigated and compared with that of undoped nc-Si/SiO2 samples.
Keywords :
annealing; boron; electroluminescence; elemental semiconductors; multilayers; nanofabrication; nanostructured materials; photoluminescence; plasma CVD; semiconductor growth; silicon; silicon compounds; PECVD; Si:B-SiO2; boron-doped nanocrystal multilayers; electroluminescence; room temperature photoluminescence; temperature 293 K to 298 K; thermal annealing; Annealing; Doping; Films; Nanocrystals; Nonhomogeneous media; Photoluminescence; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643346
Filename :
5643346
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3202703
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