DocumentCode
3202790
Title
SiGeC avalanche light emitters integrated with CMOS
Author
Augusto, C.J.R.P. ; Forester, L. ; Diniz, P.
Author_Institution
Quantum Semicond. LLC, San Jose, CA, USA
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
287
Lastpage
289
Abstract
A CMOS-integrated SiGeC APD is presented, which under avalanche breakdown emits white light perpendicularly to the SiGeC layers. It can be used as an optical pump for devices such as Raman or Er-based lasers.
Keywords
CMOS integrated circuits; avalanche breakdown; avalanche photodiodes; germanium compounds; integrated optoelectronics; light emitting diodes; optical pumping; semiconductor materials; silicon compounds; CMOS-integrated avalanche light emitters; Er-based lasers; Raman lasers; SiGeC; avalanche breakdown; infrared detectors; lasers; light-emitting diodes; optical pumping; CMOS integrated circuits; Laser excitation; Optical films; Photonic band gap; Silicon; Stimulated emission; SiGeC devices; Silicon; infrared detectors; integrated optoelectronics; lasers; light-emitting diodes; optical communications;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643350
Filename
5643350
Link To Document