Title :
SiGeC avalanche light emitters integrated with CMOS
Author :
Augusto, C.J.R.P. ; Forester, L. ; Diniz, P.
Author_Institution :
Quantum Semicond. LLC, San Jose, CA, USA
Abstract :
A CMOS-integrated SiGeC APD is presented, which under avalanche breakdown emits white light perpendicularly to the SiGeC layers. It can be used as an optical pump for devices such as Raman or Er-based lasers.
Keywords :
CMOS integrated circuits; avalanche breakdown; avalanche photodiodes; germanium compounds; integrated optoelectronics; light emitting diodes; optical pumping; semiconductor materials; silicon compounds; CMOS-integrated avalanche light emitters; Er-based lasers; Raman lasers; SiGeC; avalanche breakdown; infrared detectors; lasers; light-emitting diodes; optical pumping; CMOS integrated circuits; Laser excitation; Optical films; Photonic band gap; Silicon; Stimulated emission; SiGeC devices; Silicon; infrared detectors; integrated optoelectronics; lasers; light-emitting diodes; optical communications;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643350
