• DocumentCode
    3202803
  • Title

    On the possibility of SiGeC superlattices having a broken-gap

  • Author

    Augusto, Carlos J. R. P. ; Forester, Lynn ; Diniz, Pedro

  • Author_Institution
    Quantum Semicond. LLC, San Jose, CA, USA
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    290
  • Lastpage
    292
  • Abstract
    A CMOS-compatible SiGeC superlattice design is proposed that offers the possibility of generating a range of direct bandgaps smaller than Ge´s, down to broken-gap provided that sufficient substitutional carbon content can be incorporated.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; energy gap; integrated optics; photonic band gap; semiconductor epitaxial layers; semiconductor materials; semiconductor superlattices; silicon compounds; thermoelectricity; (Si1-yCy)m-(Ge)n; CMOS-compatible superlattice design; broken-gap; direct bandgaps; photonic active layer material; substitutional carbon content; thermoelectric epitaxial layers; CMOS integrated circuits; Photonic band gap; Photonics; Sensors; Silicon; Superlattices; SiGeC devices; Silicon; infrared detectors; integrated optoelectronics; lasers; light-emitting diodes; optical communications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643351
  • Filename
    5643351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202803