Title :
On the possibility of SiGeC superlattices having a broken-gap
Author :
Augusto, Carlos J. R. P. ; Forester, Lynn ; Diniz, Pedro
Author_Institution :
Quantum Semicond. LLC, San Jose, CA, USA
Abstract :
A CMOS-compatible SiGeC superlattice design is proposed that offers the possibility of generating a range of direct bandgaps smaller than Ge´s, down to broken-gap provided that sufficient substitutional carbon content can be incorporated.
Keywords :
CMOS integrated circuits; Ge-Si alloys; energy gap; integrated optics; photonic band gap; semiconductor epitaxial layers; semiconductor materials; semiconductor superlattices; silicon compounds; thermoelectricity; (Si1-yCy)m-(Ge)n; CMOS-compatible superlattice design; broken-gap; direct bandgaps; photonic active layer material; substitutional carbon content; thermoelectric epitaxial layers; CMOS integrated circuits; Photonic band gap; Photonics; Sensors; Silicon; Superlattices; SiGeC devices; Silicon; infrared detectors; integrated optoelectronics; lasers; light-emitting diodes; optical communications;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643351
