Title :
Precise Performance Measurement of High-Efficiency Crystalline Silicon Solar Cells
Author :
Hishikawa, Yoshihiro
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
The effect of the sweep speed and direction on the I-V measurement of state-of-the-art high-efficiency c-Si cells and modules such as HIT and backside-contact technologies is investigated, in order to clarify the precise characterization techniques for those devices. The Pmax and FF of these devices with conversion efficiencies of ~20% show significant dependence on the sweep conditions by 5-10% or more, when the sweep speed is less than 50-100 msec. Their I-V measurements should be carried out in the conditions where the result is independent on both the sweep direction and speed
Keywords :
electrical conductivity; elemental semiconductors; silicon; solar cells; I-V measurement; Si; backside-contact technologies; crystalline silicon solar cells; heterojunction intrinsic thin film; Capacitance; Crystallization; Current measurement; Electronic equipment testing; Mass production; Photovoltaic cells; Pulse measurements; Silicon; Temperature control; Velocity measurement;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279647
