DocumentCode
3202827
Title
Influence of electronic nonlinear process in silicon Raman wavelength converter
Author
Huang, Ying ; Tang, Ming ; Shum, Ping ; Lin, Chinlon
Author_Institution
Network Technol. Res. Centre, Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
284
Lastpage
286
Abstract
Electronic nonlinear processes such as SPM, XPM and FWM cause dynamic phase shifting and enhance wavelength conversion efficiency in silicon Raman wavelength converter. Waveguide miniaturization to 4cm yields optimized conversion efficiency of -9.1dB.
Keywords
Raman lasers; elemental semiconductors; multiwave mixing; optical modulation; optical waveguides; optical wavelength conversion; semiconductor lasers; silicon; FWM; SPM; XPM; cross-phase modulation; dynamic phase shifting; electronic nonlinear process; four wave-mixing; self-phase modulation; silicon Raman wavelength converter; waveguide miniaturization; Absorption; Modulation; Optical waveguides; Optical wavelength conversion; Raman scattering; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643353
Filename
5643353
Link To Document