Title :
Characteristic Evaluation of SiNx: H Films Passivation Effect on Ga-doped Multi-crystalline Silicon Wafers
Author :
Arifuku, N. ; Jin, H. ; Jeon, M.S. ; Dhamrin, M. ; Suda, M. ; Saitoh, T. ; Kamisako, K. ; Hirasawa, T. ; Eguchi, T. ; Yamaga, I.
Author_Institution :
Fac. of Technol., Tokyo Univ. of Agric. & Technol.
Abstract :
This paper presents the effect of silicon nitride (SiNx:H) films formed by plasma-enhanced chemical vapor deposition (PECVD) method on Ga-doped multi-crystalline silicon (mc-Si) wafers including the passivation quality and carrier lifetime improvement after hydrogenation. The FT-IR spectra of SiNx:H films deposited at different SiH4/NH3 gas flow ratios in PECVD are used to calculated the hydrogen concentrations and bond densities of Si-Hn, N-H and Si-N were calculated. Furthermore, the effect of forming gas annealing (FGA) on the effective lifetime of passivated wafers by PECVD is investigated at different temperatures
Keywords :
Fourier transform spectra; annealing; carrier lifetime; elemental semiconductors; gallium; hydrogen; infrared spectra; passivation; plasma CVD; silicon; silicon compounds; surface conductivity; surface recombination; thin films; FT-IR spectra; N-H bond densities; PECVD method; Si-Hn bond densities; Si-N bond densities; Si:Ga; SiH4-NH3 gas flow ratios; SiNx:H; carrier lifetime; forming gas annealing; gallium-doped multicrystalline silicon wafers; hydrogen concentrations; hydrogenation; passivation effect; plasma-enhanced chemical vapor deposition; silicon nitride films; Charge carrier lifetime; Chemical vapor deposition; Fluid flow; Hydrogen; Passivation; Plasma chemistry; Plasma properties; Semiconductor films; Silicon compounds; Wafer bonding;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279649
