Title :
Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
Author :
Chehrenegar, Pirooz ; Axelsson, Olle ; Grahn, Jan ; Rorsman, Niklas ; Felbinger, Jonathan G. ; Andersson, Kristoffer
Abstract :
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
Keywords :
III-V semiconductors; MMIC; UHF amplifiers; gallium compounds; high electron mobility transistors; microwave amplifiers; wide band gap semiconductors; frequency 2.7 GHz to 3.6 GHz; gain 18 dB; high electron mobility transistor; highly linear HEMT amplifier; power 2.1 W; third order intercept point; Frequency measurement; Gain; Gallium nitride; HEMTs; MMICs; Noise; Noise measurement; GaN HEMT transistor; Gain; Linearity; OIP3; Power consumption; high dynamic range;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on
Conference_Location :
Vienna
Print_ISBN :
978-1-4577-0650-9
DOI :
10.1109/INMMIC.2011.5773310
