DocumentCode
3202902
Title
High performance of silicon-based resonant-cavity-enhanced (RCE) photodetectors using sol-gel bonding
Author
Zhang, Lingzi ; Zuo, Yuhua ; Cao, Quan ; Xue, Chunlai ; Chen, Buwen ; Yu, Jinzhong ; Wang, Qiming
Author_Institution
State Key Joint Lab. of Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
272
Lastpage
274
Abstract
We report Si-based InGaAs RCE photodetectors. The detector without top mirror exhibits saturation output current higher than 19.8mA, and the responsivity is 0.33A/W. The full width at half maximum of the RCE photodetector is 4.8nm.
Keywords
bonding processes; gallium arsenide; indium compounds; photodetectors; silicon compounds; sol-gel processing; InGaAs; RCE photodetectors; current 19.8 mA; silicon-based resonant-cavity-enhanced photodetectors; sol-gel bonding; wavelength 4.8 nm; Bonding; Distributed Bragg reflectors; Indium gallium arsenide; Indium phosphide; Photodetectors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643357
Filename
5643357
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