• DocumentCode
    3202937
  • Title

    As-grown Ge pin photodiodes on Si with low dark current achieved by hydrogen desorption technique

  • Author

    Takada, Yoichi ; Suzuki, Ryota ; Park, Sungbong ; Osaka, Jiro ; Ishikawa, Yasuhiko ; Wada, Kazumi

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    266
  • Lastpage
    268
  • Abstract
    As-grown Ge pin photodiodes on Si with a low dark current (4.6 × 10 - 2 A/cm2 at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.
  • Keywords
    dark conductivity; desorption; elemental semiconductors; germanium; hydrogen; p-i-n photodiodes; CMOS backend process; Ge-Si; Si; hydrogen desorption; low dark current; pin photodiodes; Annealing; Dark current; PIN photodiodes; Rough surfaces; Silicon; Surface roughness; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643359
  • Filename
    5643359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202937