Title :
As-grown Ge pin photodiodes on Si with low dark current achieved by hydrogen desorption technique
Author :
Takada, Yoichi ; Suzuki, Ryota ; Park, Sungbong ; Osaka, Jiro ; Ishikawa, Yasuhiko ; Wada, Kazumi
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
As-grown Ge pin photodiodes on Si with a low dark current (4.6 × 10 - 2 A/cm2 at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.
Keywords :
dark conductivity; desorption; elemental semiconductors; germanium; hydrogen; p-i-n photodiodes; CMOS backend process; Ge-Si; Si; hydrogen desorption; low dark current; pin photodiodes; Annealing; Dark current; PIN photodiodes; Rough surfaces; Silicon; Surface roughness; Surface treatment;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643359
