DocumentCode :
3202947
Title :
A radiation-tolerant ring oscillator phase-locked loop in 0.13µm CMOS
Author :
Chen, Lei ; Wen, Xiaoke ; You, Yang ; Huang, Deping ; Li, Changzhi ; Chen, Jinghong
Author_Institution :
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
fYear :
2012
fDate :
5-8 Aug. 2012
Firstpage :
13
Lastpage :
16
Abstract :
Advanced CMOS technologies have demonstrated reduced sensitivity to radiation total-ionization-dose (TID) effect. However, the reduced device dimensions can significantly increase the circuit sensitivity to transient radiation effects. This paper presents a radiation-tolerant ring oscillator Phase-Locked Loop (PLL) designed in a commercial 0.13 μm CMOS process. The PLL is designed for radiation-tolerant high-speed serial link applications. It operates over a frequency range of 1.1 GHz to 4.4 GHz with an RMS jitter of 1.8 ps at 3.125 GHz. The phase frequency detector (PFD) and frequency divider (FD) are designed with a novel D-flip-flop (DFF) that is robust to single event radiation effects (SEEs). The voltage-controlled oscillator (VCO) is designed with two ring oscillators cross-coupled thus compensating each other with the radiation-induced transient currents. Each ring oscillator has its own control voltage driven by an independent charge pump and loop filter. The redundancy helps to mitigate radiation strikes on the VCO control voltage. Simulation results show that the proposed PLL demonstrates radiation immunity for critical charge values up to 250 fC and can recover quickly from radiation strikes on its sensitive nodes. The PLL operates under a 1.2 V power supply and consumes 40 mW of power.
Keywords :
CMOS integrated circuits; flip-flops; frequency dividers; jitter; mean square error methods; phase detectors; phase locked loops; radiation effects; voltage-controlled oscillators; CMOS process; D-flip-flop; DFF; PFD; PLL design; RMS jitter; SEE; TID effect; VCO control voltage; advanced CMOS technology; charge pump; circuit sensitivity; critical charge values; frequency 1.1 GHz to 4.4 GHz; frequency divider; loop filter; phase frequency detector; power supply; radiation immunity; radiation strikes; radiation total-ionization-dose effect; radiation-induced transient currents; radiation-tolerant high-speed serial link applications; radiation-tolerant ring oscillator phase-locked loop; reduced device dimensions; reduced sensitivity; redundancy; ring oscillators; sensitive nodes; single event radiation effects; size 0.13 mum; transient radiation effects; voltage 1.2 V; voltage-controlled oscillator; Delay; Frequency conversion; Phase locked loops; Ring oscillators; Transient analysis; Voltage control; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
ISSN :
1548-3746
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2012.6291945
Filename :
6291945
Link To Document :
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