• DocumentCode
    3202947
  • Title

    A radiation-tolerant ring oscillator phase-locked loop in 0.13µm CMOS

  • Author

    Chen, Lei ; Wen, Xiaoke ; You, Yang ; Huang, Deping ; Li, Changzhi ; Chen, Jinghong

  • Author_Institution
    Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
  • fYear
    2012
  • fDate
    5-8 Aug. 2012
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    Advanced CMOS technologies have demonstrated reduced sensitivity to radiation total-ionization-dose (TID) effect. However, the reduced device dimensions can significantly increase the circuit sensitivity to transient radiation effects. This paper presents a radiation-tolerant ring oscillator Phase-Locked Loop (PLL) designed in a commercial 0.13 μm CMOS process. The PLL is designed for radiation-tolerant high-speed serial link applications. It operates over a frequency range of 1.1 GHz to 4.4 GHz with an RMS jitter of 1.8 ps at 3.125 GHz. The phase frequency detector (PFD) and frequency divider (FD) are designed with a novel D-flip-flop (DFF) that is robust to single event radiation effects (SEEs). The voltage-controlled oscillator (VCO) is designed with two ring oscillators cross-coupled thus compensating each other with the radiation-induced transient currents. Each ring oscillator has its own control voltage driven by an independent charge pump and loop filter. The redundancy helps to mitigate radiation strikes on the VCO control voltage. Simulation results show that the proposed PLL demonstrates radiation immunity for critical charge values up to 250 fC and can recover quickly from radiation strikes on its sensitive nodes. The PLL operates under a 1.2 V power supply and consumes 40 mW of power.
  • Keywords
    CMOS integrated circuits; flip-flops; frequency dividers; jitter; mean square error methods; phase detectors; phase locked loops; radiation effects; voltage-controlled oscillators; CMOS process; D-flip-flop; DFF; PFD; PLL design; RMS jitter; SEE; TID effect; VCO control voltage; advanced CMOS technology; charge pump; circuit sensitivity; critical charge values; frequency 1.1 GHz to 4.4 GHz; frequency divider; loop filter; phase frequency detector; power supply; radiation immunity; radiation strikes; radiation total-ionization-dose effect; radiation-induced transient currents; radiation-tolerant high-speed serial link applications; radiation-tolerant ring oscillator phase-locked loop; reduced device dimensions; reduced sensitivity; redundancy; ring oscillators; sensitive nodes; single event radiation effects; size 0.13 mum; transient radiation effects; voltage 1.2 V; voltage-controlled oscillator; Delay; Frequency conversion; Phase locked loops; Ring oscillators; Transient analysis; Voltage control; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
  • Conference_Location
    Boise, ID
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4673-2526-4
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2012.6291945
  • Filename
    6291945