Dielectric breakdown characteristics and interface trapping of hafnium oxide films

Author

Zhan, N. ; Poon, M.C. ; Wong, Hei ; Ng, K.L. ; Kok, C.W. ; Filip, V.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

629

Abstract

The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal annealing are investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown are also observed. Results suggest that that the soft and hard breakdowns should have different precursor defects. A two-layer model of is proposed to explain these observations.

Keywords

MOSFET; annealing; dielectric thin films; electric breakdown; hafnium compounds; interface states; semiconductor device breakdown; semiconductor device models; semiconductor-insulator boundaries; sputtered coatings; HfO₂; area effects; dielectric breakdown characteristics; direct sputtering; hafnium gate oxide; hard breakdown; interface trapping; rapid thermal annealing; soft breakdowns; stress-voltage effects; two-layer model; CMOS technology; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric materials; Electric breakdown; Electron traps; Hafnium oxide; Rapid thermal annealing; Sputtering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314907

Filename

1314907