DocumentCode :
3203044
Title :
18% Large Area Screen-Printed Solar Cells on Textured MCZ Silicon with High Sheet Resistance Emitter
Author :
Ebong, A. ; Upadhyaya, V. ; Rounsaville, B. ; Kim, D.S. ; Tate, K. ; Rohatgi, A.
Author_Institution :
Center of Excellence for Photovoltaic Res. & Educ., Georgia Inst. of Technol., Atlanta, GA
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
1326
Lastpage :
1329
Abstract :
In this paper we report on high efficiency screen-printed 49 cm2 solar cells fabricated on randomly textured float zone (1.2 ¿-cm) and magnetic Czochralski (MCZ) silicon with resistivities of 1.2 and 4.8 ¿-cm, respectively. A simple process involving POCl3 diffused emitters, low frequency PECVD silicon nitride deposition, Al back contact print, Ag front grid print followed by co-firing of the contacts and forming gas anneal produced efficiencies of 17.6% on 1.2 ¿-cm textured float Zone Si, 17.9% on 1.2 ¿-cm MCZ Si and 18.0% on 4.8 ¿-cm MCZ Si. A combination of high sheet resistance emitter (~95 ¿-/¿) and the surface texturing resulted in a short circuit current density of 37.8 mA/cm2 in the 4.8 ¿-cm MCZ cell, 37.0 mA/cm2 in the 1.2 ¿-cm2 MCZ cell and 36.5 mA/cm2 in the 1.2 ¿-cm2 float zone cell. The open circuit voltages were consistent with the base resistivities of the two materials. The fill factors were in the range of 0.760-0.770 indicating there is considerable room for improvement. Detailed modeling and analysis is performed to explain the cell performance and provide guidelines for achieving 20% efficient screen-printed cells on MCZ Si.
Keywords :
aluminium; electrical resistivity; elemental semiconductors; plasma CVD; semiconductor device manufacture; silicon; silicon compounds; silver; solar cells; surface texture; Ag; Ag front grid prints; Al; Al back contact prints; PECVD silicon nitride deposition; POCl3; SiN; annealing; contact co-firing; diffused emitters; fill factors; high sheet resistance emitter; open circuit voltages; printed solar cells; short circuit current density; textured magnetic Czochralski silicon; Annealing; Conductivity; Contact resistance; Frequency; Photovoltaic cells; Short circuit currents; Silicon; Surface resistance; Surface texture; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279675
Filename :
4059889
Link To Document :
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