DocumentCode :
3203048
Title :
CAD techniques for development of millimeter wave diodes sources
Author :
Camarero, Rafael ; De Paco, Pedro ; Menéndez, Oscar
Author_Institution :
Dept. de Telecomunicacions i Eng. de Sistemes, Univ. Autonoma de Barcelona, Cerdanyola del Valles, Spain
fYear :
2011
fDate :
18-19 April 2011
Firstpage :
1
Lastpage :
4
Abstract :
The development of frequency multipliers based on GaAs Schottky barrier diodes have become a practical solution to implement power sources at millimeter and sub-millimeter wave regions. At these frequencies, parasitic effects introduced by the diode package elements cannot be neglected, and an accurate modeling of it is necessary. A single-anode design approach based on a commercial diode from VDI is presented.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; electronic design automation; frequency multipliers; millimetre wave diodes; CAD; GaAs; Schottky barrier diode; diode package element; frequency multiplier; millimeter wave diodes source; single-anode design approach; Anodes; Harmonic analysis; Junctions; Power harmonic filters; Schottky diodes; Varactors; Varistors; CAD techniques; Diode package modeling; GaAs Schottky diode; frequency multipliers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on
Conference_Location :
Vienna
Print_ISBN :
978-1-4577-0650-9
Type :
conf
DOI :
10.1109/INMMIC.2011.5773319
Filename :
5773319
Link To Document :
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