Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology

Author

Enjin Fu ; Koomson, Valencia Joyner ; Pengfei Wu ; Shengling Deng ; Huang, Zhaoran Rena

Author_Institution

Dept. of Electr. Eng., Tufts Univ., Medford, MA, USA

fYear

2012

fDate

5-8 Aug. 2012

Firstpage

37

Lastpage

40

Abstract

Monolithic optoelectronic integrated circuits are a primary focus of research for high-speed optical communication system development. Standard silicon processes provide a cost effective way for electro-optic system integration. This paper presents a monolithic optical modulator and driver design based on 130nm SiGe BiCMOS technology. Post-layout simulation results demonstrate that the modulator achieves a switch frequency of 10GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; driver circuits; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit design; integrated optoelectronics; optical communication equipment; optical fibre communication; optical modulation; SiGe; SiGe BiCMOS technology; driver design; electro-optic system integration; frequency 10 GHz; high-speed optical communication system development; integrated high-speed HBT-based electroabsorption modulator design; monolithic optical modulator; monolithic optoelectronic integrated circuits; post-layout simulation; size 130 nm; standard silicon processes; switch frequency; Electrooptic modulators; Heterojunction bipolar transistors; Optical interferometry; Optical switches; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Conference_Location

Boise, ID

ISSN

1548-3746

Print_ISBN

978-1-4673-2526-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2012.6291951

Filename

6291951