Title :
Comparison of ultra-thin gate oxide degradation in P and N-MOSFETs
Author :
Petit, C. ; Meinertzhagen, A. ; Zander, D. ; Simonetti, O. ; Fadlallah, M. ; Maurel, T.
Author_Institution :
L.A.M., Univ. de Reims, France
Abstract :
NMOSFETs and PMOSFETs gate reliability under constant voltage stresses are compared. Gate current variation, in depiction regime, has been used to monitor the oxide reliability. It has been shown that, at low voltages, negative stresses are more degrading that positive ones for both P and N-MOSFET.
Keywords :
MOSFET; dielectric thin films; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; Gate current variation; N-MOSFETs; P-MOSFETs; constant voltage stresses; depletion regime; gate reliability; low voltages; negative stresses; ultra-thin gate oxide degradation; Breakdown voltage; Current measurement; Degradation; Electron traps; Leakage current; Low voltage; MOSFET circuits; Monitoring; Stress; Tunneling;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314910
