Improved methodology based on hot carriers injections to detect wafer charging damage in advanced CMOS technologies

Author

Goguenheim, D. ; Bravaix, A. ; Gomri, S. ; Moragues, J.M. ; Monserie, C. ; Legrand, N. ; Boivin, P.

Author_Institution

ISEN-Toulon Dept., UMR CNRS, Toulon, France

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

649

Abstract

We have studied the possibility to use hot carrier stresses to reveal the damage due wafer charging during plasma process steps in 0.18 μm, 0.25 μm and 0.6 μm CMOS technologies. We have investigated various hot carrier conditions in N- and P-MOSFETs and compared the results to classical parameter studies and short high field injections using a relative sensitivity factor. The most accurate monitor remains the threshold voltage and the most sensitive configuration is found to be short hot electron injections in PMOSFET´s.

Keywords

CMOS integrated circuits; MOSFET; charge injection; hot carriers; integrated circuit reliability; semiconductor device reliability; 0.18 micron; 0.25 micron; 0.6 micron; advanced CMOS technologies; hot carrier stresses; hot carriers injections; improved methodology; plasma process steps; short hot electron injections; threshold voltage; wafer charging damage; CMOS technology; Degradation; Hot carriers; Leakage current; MOSFET circuits; Plasma applications; Plasma devices; Probes; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314912

Filename

1314912