DocumentCode
3203173
Title
Factors limiting further improvement of a-SiGe:H
Author
Ikeda, T. ; Ganguly, G. ; Matsuda, A.
Author_Institution
Electrotech. Lab., Tsukuba, Japan
fYear
1996
fDate
13-17 May 1996
Firstpage
1157
Lastpage
1160
Abstract
The authors´ results suggest that under conditions where the contribution of short lifetime radicals to growth has been minimized, the factors limiting further improvement of a-SiGe:H are (a) the low mobility of the Ge related precursor and (b) loss of surface hydrogen coverage due to rapid desorption from Ge-H sites. Therefore, preparing high quality a-SiGe:H requires high temperatures for increasing the precursor mobility and high deposition rates for reducing the effective hydrogen desorption rate
Keywords
Ge-Si alloys; amorphous semiconductors; carrier mobility; defect absorption spectra; desorption; hydrogen; infrared spectra; photoconductivity; refractive index; semiconductor materials; semiconductor thin films; surface structure; SiGe:H; a-SiGe:H; deposition rate; lifetime radicals; low mobility; rapid desorption; surface hydrogen coverage; Absorption; Fluid flow; Hydrogen; Image motion analysis; Optical films; Optical refraction; Optical variables control; Plasma temperature; Radio frequency; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564337
Filename
564337
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