DocumentCode
3203199
Title
Dose rate dependence of RADFET irradiation and post-irradiation responses
Author
Jaksic, A. ; Kimoto, Y. ; Mohammadzadeh, A. ; Mathewson, A.
Author_Institution
Nat. Microelectron. Res. Centre, Cork, Ireland
Volume
2
fYear
2004
fDate
16-19 May 2004
Firstpage
661
Abstract
Several RADFET biasing configurations have been compared in terms of radiation sensitivity, dose rate dependence and fading. Positive gate bias increases sensitivity, however the drawback is that the fading is also increased and dose rate dependence is observed. Samples irradiated with zero and negative gate bias have lower sensitivity, but don´t exhibit significant fading and dose rate dependence. The mechanisms underlying the observed effects have been analysed.
Keywords
aerospace instrumentation; dosimetry; radiation hardening (electronics); silicon radiation detectors; solid scintillation detectors; RADFET biasing configurations; RADFET irradiation response; dose rate dependence; fading; positive gate bias; post-irradiation responses; radiation sensitivity; Aerospace industry; Annealing; Circuits; Energy consumption; Fading; MOSFETs; Microprocessors; Research and development; Space charge; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314915
Filename
1314915
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