• DocumentCode
    3203212
  • Title

    The study on strain-induced second-harmonic generation in Si(111) surface and native SiO2/Si(111) interface

  • Author

    Zhao, Ji-Hong ; Su, Wen ; Chen, Qi-Dai ; Jiang, Ying ; Chen, Zhan-Guo ; Jia, Gang ; Sun, Hong-Bo

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    231
  • Lastpage
    233
  • Abstract
    The mechanism of strain-induced second-harmonic generation (SISHG) has been studied and by this means the intrinsic strain build-in native Si/SiO2 interface has been determined as a tensile with a magnitude of 3.07 × 10-4.
  • Keywords
    elemental semiconductors; optical harmonic generation; silicon; silicon compounds; Si(111) surface; SiO2-Si; build-in native interface; intrinsic strain; second harmonic generation; Force; Frequency conversion; Lattices; Nonlinear optics; Silicon; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643371
  • Filename
    5643371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203212