Title :
Mach-Zehnder silicon modulator on bulk silicon substrate; toward DRAM optical interface
Author :
Shin, D.J. ; Lee, K.H. ; Ji, H.-C. ; Na, K.W. ; Kim, S.G. ; Bok, J.K. ; You, Y.S. ; Kim, S.S. ; Joe, I.S. ; Suh, S.D. ; Pyo, J. ; Shin, Y.H. ; Ha, K.H. ; Park, Y.D. ; Chung, C.H.
Author_Institution :
Image Archit. Lab., Samsung Electron., Yongin, South Korea
Abstract :
We present a Mach-Zehnder silicon modulator fabricated on a bulk silicon substrate featuring active length of 200 μm, modulation speed up to 5 Gb/s, power consumption of 2 pJ/bit, and extinction ratio of 10 dB.
Keywords :
DRAM chips; Mach-Zehnder interferometers; elemental semiconductors; optical design techniques; optical modulation; silicon; substrates; DRAM optical interface; Mach-Zehnder silicon modulator; Si; bulk silicon substrate; power consumption; Optical device fabrication; Optical imaging; Optical interconnections; Optical modulation; Optical waveguides; Silicon; optical interconnect; optical modulation; silicon photonics;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643376
