Title :
Characterization of PECVD Silicon Nitride Passivation with Photoluminescence Imaging
Author :
Chen, Florence W. ; Cotter, Jeffrey E. ; Trupke, Thorsten ; Bardos, Robert A.
Author_Institution :
Centre for Excellence for Adv. Silicon Photovoltaic & Photonics, New South Wales Univ., Sydney, NSW
Abstract :
In this paper, we present studies of plasma-enhanced chemical vapor deposited silicon nitride in which photoluminescence imaging was used to characterize our deposition process. A showcase of different processing issues such as equipment design, processing conditions, and manual handling is presented. We also demonstrate how photoluminescence imaging can be particularly useful for process monitoring, diagnoses, and development. An increase in implied Voc of up to 25 mV was achieved through the use of PL imaging as a diagnostic tool
Keywords :
passivation; photoluminescence; plasma CVD; process monitoring; silicon compounds; thin films; PECVD; SiN; diagnostic tool; passivation; photoluminescence imaging; plasma-enhanced chemical vapor deposition; process monitoring; silicon nitride; Chemical processes; Image analysis; Optical films; Passivation; Photoluminescence; Plasma chemistry; Plasma materials processing; Pollution measurement; Semiconductor films; Silicon compounds;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279687
