Modeling and simulation of tunneling current in ultrathin oxide with the presence of oxide/silicon interface traps

Author

Filip, V. ; Wong, H. ; Chu, P.L.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

679

Abstract

This paper describes a model for the charge tunneling through metal-oxide-semiconductor structures. It includes the tunneling of two-dimensional (2D) electronic gas at the semiconductor/oxide interface and the space charge effects due to the trapped electrons. Trap-assisted tunneling is also considered. The theoretical results are compared to some available experimental data. The theoretical results further predict that there exist of composition spatial fluctuations at the semiconductor-oxide interface.

Keywords

MIS structures; interface states; semiconductor device models; semiconductor-insulator boundaries; space charge; tunnelling; two-dimensional electron gas; Si-SiO₂; SiO₂-Si; composition spatial fluctuations; metal-oxide-semiconductor structures; modeling; oxide/silicon interface traps; semiconductor-oxide interface; simulation; space charge effects; tunneling current; two-dimensional electronic gas; ultrathin oxide; Current density; Effective mass; Electron emission; Electron traps; Fluctuations; Potential energy; Silicon; Space charge; Substrates; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314921

Filename

1314921