Title :
Constant current stress characteristics of RF-sputtered Ta2O5 films on silicon
Author :
Novkovski, N. ; Atanassova, E.
Author_Institution :
Fac. of Natural Sci. & Math., Inst. of Phys., Skopje, Macedonia
Abstract :
In contrast to the case of silicon dioxide films, evolution of the gate voltage during constant current stress for Ta2O5 films grown on silicon exhibits an additional decreasing region. This decrease can be explained by the thickness lowering of the thin silicon dioxide layer adjacent do the silicon substrate, as concluded from the increase of the capacity in accumulation.
Keywords :
dielectric thin films; elemental semiconductors; insulating thin films; semiconductor-insulator boundaries; silicon; sputtered coatings; tantalum compounds; RF-sputtered Ta2O5 films; Si substrate; Ta2O5-Si; accumulation; capacity; constant current stress characteristics; gate voltage; Annealing; Current density; MOS capacitors; Plasma temperature; Radio frequency; Semiconductor films; Silicon compounds; Stress; Substrates; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314922
