• DocumentCode
    3203368
  • Title

    Development of flexible fiber-type poly-Si solar cell

  • Author

    Kuraseko, Hiroshi ; Nakamura, Toshihiro ; Toda, Sadayuki ; Koaizawa, Hisashi ; Jia, Haijun ; Kondo, Michio

  • Author_Institution
    Production Technol. Dev. Center, Furukawa Electr. Co. Ltd., Chiba
  • Volume
    2
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    1380
  • Lastpage
    1383
  • Abstract
    In order to obtain low-cost, high-performance and flexible silicon solar cell, a novel poly-Si solar cell using glass fiber substrate has been developed. Two ways for preparing poly-Si film on glass fiber for very high deposition rate were studied; one is atmospheric thermal CVD and the other is microwave PECVD. The film prepared by atmospheric thermal CVD showed good crystallinity and high hole mobility of 200cm 2/Vs at a carrier concentration of 6e15cm-3, despite its high deposition rate. The solar cell was examined on SiO2 substrate, and cell efficiency by atmospheric thermal CVD was 1.35%. Novel microwave PECVD system specialized for glass fiber substrate was also developed, and poly-Si film could be deposited on the glass fiber substrate at a deposition rate of 1 mum/s
  • Keywords
    elemental semiconductors; hole mobility; plasma CVD; semiconductor thin films; silicon; solar cells; 1.35 percent; Si; SiO2; atmospheric thermal CVD; carrier concentration; crystallinity; flexible fiber-type poly-silicon solar cell; glass fiber substrate; hole mobility; microwave PECVD; Argon; Crystallization; Electrodes; Furnaces; Glass; Materials science and technology; Photovoltaic cells; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279689
  • Filename
    4059903