• DocumentCode
    3203383
  • Title

    A high transconductance efficiency FGMOS OTA for gm-C ladder filters

  • Author

    Hizon, John Richard E ; Rodriguez-Villegas, Esther

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
  • fYear
    2012
  • fDate
    5-8 Aug. 2012
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    A new low voltage FGMOS OTA is proposed that can achieve high transconductance efficiency and offers flexibility in tuning that is suitable for gm-C ladder filters. OTAs with higher transconductance efficiency contribute to higher filter dynamic range for a given power consumption. Schematic simulations show efficiencies of up to 50 for a minimum DR of 63dB were achieved in an AMS 0.35μm CMOS process with a supply voltage of 1.8V and power consumption of 56μW.
  • Keywords
    CMOS integrated circuits; ladder filters; low-power electronics; AMS CMOS process; floating gate MOS; gm-C ladder filter; high transconductance efficiency FGMOS OTA; power 56 muW; power consumption; schematic simulation; size 0.35 mum; voltage 1.8 V; CMOS integrated circuits; Dynamic range; Linearity; Noise; Power demand; Transconductance; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
  • Conference_Location
    Boise, ID
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4673-2526-4
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2012.6291968
  • Filename
    6291968