Title :
GaN transistor-based Class E power amplifier for the low L-band
Author :
Ng-Molina, F.Y. ; Martín-Guerrero, T.M. ; Camacho-Peñalosa, C. ; García, J.A. ; Mata-Contreras, J.
Author_Institution :
Dipt. Ing. de Comun., Univ. de Malaga, Malaga, Spain
Abstract :
A GaN HEMT-based Class E power amplifier to work in the low L-band has been designed, built and measured. Measurements exhibit a 74% Power Added Efficiency and a 15W output power performance. The prototype has been tested under continuous wave excitation, two tone input signal and a constant envelope modulated signal used for the E5 band (1.19 GHz) of the future Galileo navigation system.
Keywords :
III-V semiconductors; UHF amplifiers; UHF transistors; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; HEMT-based class E power amplifier; efficiency 74 percent; frequency 1.19 GHz; power 15 W; Distortion measurement; Frequency measurement; Gallium nitride; Modulation; Power amplifiers; Power measurement; Prototypes; Class E; GaN HEMT; Power amplifiers;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on
Conference_Location :
Vienna
Print_ISBN :
978-1-4577-0650-9
DOI :
10.1109/INMMIC.2011.5773342
