• DocumentCode
    3203692
  • Title

    Luminescence of Tm3+ in dislocation engineered silicon substrates

  • Author

    Lourenço, M.A. ; Wong, L. ; Gwilliam, R.M. ; Homewood, K.P.

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    159
  • Lastpage
    161
  • Abstract
    Photoluminescence at 1.2 to1.4 μm is demonstrated in dislocation engineered silicon substrates doped with Tm3+ leading to the development of forward biased light emitting devices operating at a turn-on voltage of only 1 V.
  • Keywords
    dislocations; elemental semiconductors; light emitting devices; photoluminescence; silicon; thulium; Si:Tm; dislocation engineered silicon substrates; forward biased light emitting devices; photoluminescence; thulium ion; turn-on voltage; voltage 1 V; wavelength 1.2 mum to 1.4 mum; Annealing; Optical device fabrication; Photoluminescence; Silicon; Substrates; Thermal quenching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643395
  • Filename
    5643395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203692