• DocumentCode
    3203704
  • Title

    Photoluminescence from dislocations in silicon induced by irradiation of electron beams

  • Author

    Xiang, Luelue ; Li, Dongsheng ; Jin, Lu ; Yang, Deren

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    150
  • Lastpage
    152
  • Abstract
    We induced dislocations controllably by using irradiation of electron beam. The dislocations induced by irradiation slipped though whole wafer and well-distributed at its slipping direction {111} 〈100〉 with a density highest to ~1.3×107 cm-2. And dislocations related luminescence (DRL) peaks from D1 to D4 were observed in the irradiated silicon. This method may lead to the silicon based light emitting device with the compatibility of integrated circuit technology.
  • Keywords
    electron beam effects; elemental semiconductors; photoluminescence; silicon; slip; Si; dislocations; electron beam irradiation; irradiation slip; photoluminescence; slipping direction; Electron beams; Electron optics; Integrated circuit technology; Photoluminescence; Radiation effects; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643396
  • Filename
    5643396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3203704