DocumentCode :
3203890
Title :
Surface plasmon enhanced electroluminescence of SiNx film based MIS device
Author :
Ren, Changrui ; Li, Dongsheng ; Jin, Lu ; Xiang, Lue Lue ; Yang, Deren
Author_Institution :
Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
129
Lastpage :
131
Abstract :
Electroluminescence of MIS devices consisted with an ITO/SiO2/SiNx/Ag/p-Si/Al multilayer structure, as well as the multilayer without Ag, was investigated. The enhancement of EL intensity of MIS devices by introduce an Ag islands film was observed. Due to the existence of Ag islands film in the MIS devices of SiNx films, the injected current of MIS devices was increased and the extracted EL was also enhanced by the excitons-LSPs coupling.
Keywords :
MIS devices; aluminium; electroluminescence; excitons; indium compounds; semiconductor thin films; silicon compounds; silver; surface plasmons; tin compounds; Ag islands film; ITO-SiO2-SiNx-Ag-Si-Al; MIS device; electroluminescence; excitons-LSP coupling; multilayer structure; surface plasmon; thin films; Couplings; Films; Light emitting diodes; MIS devices; Periodic structures; Physics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643405
Filename :
5643405
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203890
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