DocumentCode :
3203996
Title :
Upper limit for the amplifiable Stokes power in saturated silicon waveguide Raman amplifiers
Author :
Renner, Hagen
Author_Institution :
Tech. Univ. Hamburg-Harburg, Hamburg, Germany
fYear :
2010
fDate :
1-3 Sept. 2010
Firstpage :
108
Lastpage :
110
Abstract :
We derive upper limits for the amplifiable Stokes power in saturated silicon Raman amplifiers and the tolerable product of scattering-loss and FCA coefficients. Optimal pump conditions are given analytically and optimized amplifier designs are presented.
Keywords :
Raman spectra; elemental semiconductors; optical fibre amplifiers; optical pumping; optical waveguides; silicon; Stokes power; free carrier absorption; scattering-loss; waveguide Raman amplifiers; Attenuation; Differential equations; Optimized production technology; Photonics; Raman scattering; Silicon; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
Type :
conf
DOI :
10.1109/GROUP4.2010.5643410
Filename :
5643410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3203996
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