23.5% efficient silicon solar cell with rear micro contacts of c-Si/μc-Si:H heterostructure

Author

Okamoto, S. ; Nishida, M. ; Shindo, T. ; Komatsu, Y. ; Yasue, S. ; Kaneiwa, M. ; Nanmori, T.

Author_Institution

Energy Conversion Labs., Sharp Corp., Nara, Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

255

Lastpage

258

Abstract

To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p⁺) hydrogenated microcrystalline silicon (μc-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO₂ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25°C, 100 mW/cm²) was obtained for a single crystalline silicon solar cell in 5×5 cm² area

Keywords

boron; electrical contacts; elemental semiconductors; p-n heterojunctions; passivation; silicon; solar cells; 23.5 percent; 25 C; 5 cm; Si; Si-Si:H; Si:H,B; SiO₂; SiO₂ film; boron doped μc-Si:H film; c-Si/μc-Si:H heterostructure; conversion efficiency; finger electrode patterns; high efficiency; p-type single crystalline silicon substrate; rear micro contacts; rear surface; silicon solar cell; Annealing; Crystallization; Electrodes; Passivation; Photovoltaic cells; Radiative recombination; Semiconductor films; Silicon; Substrates; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654077

Filename

654077