Title :
23.5% efficient silicon solar cell with rear micro contacts of c-Si/μc-Si:H heterostructure
Author :
Okamoto, S. ; Nishida, M. ; Shindo, T. ; Komatsu, Y. ; Yasue, S. ; Kaneiwa, M. ; Nanmori, T.
Author_Institution :
Energy Conversion Labs., Sharp Corp., Nara, Japan
fDate :
29 Sep-3 Oct 1997
Abstract :
To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p+ ) hydrogenated microcrystalline silicon (μc-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO2 film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25°C, 100 mW/cm2) was obtained for a single crystalline silicon solar cell in 5×5 cm2 area
Keywords :
boron; electrical contacts; elemental semiconductors; p-n heterojunctions; passivation; silicon; solar cells; 23.5 percent; 25 C; 5 cm; Si; Si-Si:H; Si:H,B; SiO2; SiO2 film; boron doped μc-Si:H film; c-Si/μc-Si:H heterostructure; conversion efficiency; finger electrode patterns; high efficiency; p-type single crystalline silicon substrate; rear micro contacts; rear surface; silicon solar cell; Annealing; Crystallization; Electrodes; Passivation; Photovoltaic cells; Radiative recombination; Semiconductor films; Silicon; Substrates; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654077
