Title :
Stability of Thin-Film Silicon Solar Cells
Author :
Stiebig, H. ; Reetz, W. ; Zahren, C. ; Repmann, T. ; Rech, B.
Author_Institution :
Inst. fur Photovoltaics, Forschungszentrum Julich
Abstract :
The long term stability of non-encapsulated amorphous (a-Si:H) and microcrystalline (muc-Si:H) silicon single and tandem cell structures was tested by means of light soaking (AM 1.5, T=50 degC), damp heat testing (T=85 degC, humidity=85%) and high temperature treatment (T=150 degC) up to 2000 h to simulate a variety of harsh environmental conditions. In order to study the influence of the TCO front contact and backside contact on the long term stability, cells deposited on different substrates and prepared with different backside configurations were examined. As prepared (non-encapsulated) a-Si:H and muc-Si:H diodes show very similar effects after light soaking, damp heat testing and temperature treatment. Both solar cell types show no significant variation of the solar cell parameters even after 2000 h of damp heat testing. After light soaking a-Si:H diodes exhibit the well known distinct degradation of the fill factor while the bulk properties of the investigated muc-Si:H diodes remain nearly unchanged
Keywords :
amorphous semiconductors; elemental semiconductors; high-temperature effects; semiconductor diodes; semiconductor thin films; silicon; solar cells; 150 C; 85 C; Si; damp heat testing; diodes; high temperature treatment; light soaking; microcrystalline silicon; nonencapsulated amorphous silicon; tandem cell structures; thin-film silicon solar cells; Amorphous materials; Diodes; Heat treatment; Photovoltaic cells; Semiconductor thin films; Silicon; Stability; Substrates; Temperature; Testing;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279772
