DocumentCode
320417
Title
Effect of CdS annealing in (CdCl2+CdS) atmosphere on CdTe cells
Author
Park, Sung Chan ; Han, Byung Wook ; Ahn, Jin Hyung ; Ahn, Byung Tae ; Kim, Donghwan
Author_Institution
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
531
Lastpage
534
Abstract
To increase grain size, solution-grown CdS films were annealed at 560°C in a (CdCl2+CdS) atmosphere, instead of CdCl2 only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near Eg, compared to that of CdS films annealed at 400°C for 30 min in H2. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl2 +CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface
Keywords
II-VI semiconductors; annealing; cadmium compounds; crystal morphology; grain size; semiconductor growth; semiconductor thin films; solar cells; 10 to 100 nm; 30 min; 400 C; 5 min; 560 C; CdCl2-CdS; CdCl2/CdS atmosphere; CdS; CdS annealing; CdTe; CdTe bulk defects; CdTe cells; CdTe-CdS; annealing; fill factor; grain size; optical transmittance; solar cell efficiency; solution-grown CdS films; surface morphology; Annealing; Atmosphere; Cascading style sheets; Coatings; Grain size; Materials science and technology; Optical films; Powders; Scanning electron microscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654145
Filename
654145
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