DocumentCode
3204171
Title
Design of strain-free GeSn/SiGeSn quantum-well electroabsorption modulators at 1550 nm wavelength
Author
Chang, Guo-En ; Chang, Chia-Ou
Author_Institution
Inst. of Appl. Mech., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
87
Lastpage
89
Abstract
We propose and analyze a strain-free GeSn/SiGeSn quantum-well structure for electroabsorption modulators based on the quantum-confined Stark effect at 1550 nm wavelength.
Keywords
electro-optical modulation; electroabsorption; germanium compounds; quantum confined Stark effect; quantum wells; silicon compounds; GeSn-SiGeSn; quantum-confined Stark effect; quantum-well structure; strain-free quantum-well electroabsorption modulators; wavelength 1550 nm; Absorption; Excitons; Extinction ratio; Modulation; Photonic band gap; Quantum wells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643419
Filename
5643419
Link To Document