Title :
Design of strain-free GeSn/SiGeSn quantum-well electroabsorption modulators at 1550 nm wavelength
Author :
Chang, Guo-En ; Chang, Chia-Ou
Author_Institution :
Inst. of Appl. Mech., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We propose and analyze a strain-free GeSn/SiGeSn quantum-well structure for electroabsorption modulators based on the quantum-confined Stark effect at 1550 nm wavelength.
Keywords :
electro-optical modulation; electroabsorption; germanium compounds; quantum confined Stark effect; quantum wells; silicon compounds; GeSn-SiGeSn; quantum-confined Stark effect; quantum-well structure; strain-free quantum-well electroabsorption modulators; wavelength 1550 nm; Absorption; Excitons; Extinction ratio; Modulation; Photonic band gap; Quantum wells; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643419
