Thermosensoric localization of defects in CIS solar modules

Author

Gross, W. ; Zettner, J. ; Scheuerpflug, H. ; Hierl, Th. ; Schulz, M. ; Karg, F.

Author_Institution

Bavarian Center for Appl. Energy Res., Erlangen, Germany

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

551

Lastpage

554

Abstract

Thermal imaging by an infrared camera is proposed to localize material defects in solar cell modules. The method is demonstrated on two CuInSe₂ minimodules consisting of 5 and 9 solar cells, respectively. Compared to the optical beam induced current (OBIC) method, the new thermosensoric defect localization (TDL) method is highly sensitive in solar modules and suitable for fabrication control. Shunts in the diode junction and series resistance in the semiconductor layer or the top contact may be differentiated

Keywords

copper compounds; indium compounds; infrared imaging; semiconductor device testing; solar cell arrays; ternary semiconductors; thermal analysis; CuInSe₂; CuInSe₂ solar cell modules; diode junction shunts; fabrication control; infrared camera; semiconductor layer; series resistance; thermal imaging; thermosensoric defects localization; top contact; Cameras; Computational Intelligence Society; Infrared imaging; Optical beams; Optical control; Optical device fabrication; Optical imaging; Optical materials; Photovoltaic cells; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654150

Filename

654150