Title :
High Conductive TiO2 Films Due to Auto Doping by Hot Wire CVD Method for Protecting Material of TCO Against Atomic Hydrogen Exposures
Author :
lida, T. ; Takamidou, Yasuhiko ; Watabe, Takafumi ; Yoshida, Norimitsu ; Itoh, Takashi ; Nonomura, Shuichi
Author_Institution :
Environ. & Renewable Energy Syst. Div., Gifu Univ.
Abstract :
TiO2 films as a protecting material of transparent conducting oxide (TCO) against atomic hydrogen exposures for Si thin film solar cells have been prepared by hot wire CVD method. It is found that dark conductivity of the film at room temperature reaches to the order of 10-1 S/cm. This value is 3 orders of magnitude higher than that of Nb-doped TiO2 films by RF magnetron sputtering method in our previous studies. The improvement of the dark conductivity is mainly due to auto doping of tantalum (Ta) from the filament. Structural and optical properties of the film are also reported
Keywords :
chemical vapour deposition; dark conductivity; doping; elemental semiconductors; protective coatings; semiconductor thin films; silicon; solar cells; tantalum; thin film devices; titanium compounds; 293 to 298 K; RF magnetron sputtering method; Si; TiO2:Ta; atomic hydrogen exposures; dark conductivity; doping; hot wire CVD method; optical properties; silicon thin film solar cells; structural properties; thin films; transparent conducting oxide; Conducting materials; Conductive films; Conductivity; Doping; Hydrogen; Optical films; Protection; Semiconductor films; Semiconductor thin films; Wire;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279776
