Title :
Irreversible light-induced degradation in amorphous silicon solar cells
Author :
Carlson, D.E. ; Rajan, K. ; Bradley, D.
Author_Institution :
Solarex Corp., Newtown, PA, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Irreversible light-induced degradation has been observed in amorphous silicon p-i-n solar cells exposed to intense illumination at normal operating temperatures. In addition, subjecting the cells to a strong reverse bias while exposed to intense illumination caused increases in both the open-circuit voltage and the fill factor. Both effects appear to be associated with the motion of hydrogen in the vicinity of the p/i interface
Keywords :
amorphous semiconductors; elemental semiconductors; semiconductor device testing; silicon; solar cells; Si; a-Si solar cells; fill factor; hydrogen motion; intense illumination; irreversible light-induced degradation; open-circuit voltage; operating temperature; p-i-n solar cells; p/i interface; strong reverse bias; Amorphous silicon; Annealing; Degradation; Hydrogen; Lighting; PIN photodiodes; Photovoltaic cells; Sun; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654159
