An ultra low voltage ultra low power CMOS UWB LNA using forward body biasing

Author

Dehqan, Alireza ; Kargaran, Ehsan ; Mafinezhad, Khalil ; Nabovati, Hooman

Author_Institution

Sadjad Inst. for Higher Educ., Mashhad, Iran

fYear

2012

fDate

5-8 Aug. 2012

Firstpage

266

Lastpage

269

Abstract

A fully integrated low noise amplifier suitable for ultra-low voltage and ultra-low-power UWB applications is designed and simulated in a standard 0.18μm CMOS technology. Using the common gate, current reuse topology and forward body biasing technique, the proposed UWB LNA works at a very low supply voltage and low power consumption. The flat gain diagram of the LNA are achieved by the series inductors insertion between the cascaded stages of LNA .The proposed UWB LNA has a maximum power gain of 14.6 dB with a minimum noise figure of 3.7 dB, while consuming 3.1mW power with an ultra low supply voltage of 0.6 V.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; circuit simulation; inductors; integrated circuit design; low noise amplifiers; low-power electronics; network topology; ultra wideband communication; UWB applications; common gate technique; current reuse topology; flat gain diagram; forward body biasing; low noise amplifier; low power consumption; power 3.1 mW; series inductor insertion; size 0.18 mum; ultra low supply voltage; ultra low voltage ultra low power CMOS UWB LNA; voltage 0.6 V; CMOS integrated circuits; Gain; Inductors; Logic gates; Low voltage; Noise figure; Wireless communication; forward body bias; high gain; low noise amplifier (LNA); low power; ultra low voltage; ultra wide band(UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Conference_Location

Boise, ID

ISSN

1548-3746

Print_ISBN

978-1-4673-2526-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2012.6292008

Filename

6292008