Title :
Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells
Author :
Rech, B. ; Wieder, S. ; Beneking, C. ; Loffi, A. ; Kluth, O. ; Reetz, W. ; Wagner, H.
Author_Institution :
Forschungszentrum Julich GmbH, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells
Keywords :
aluminium; amorphous semiconductors; electrical contacts; elemental semiconductors; optical properties; silicon; solar cells; zinc compounds; 10 percent; 8 percent; Si; ZnO/p-contact problem; ZnO:Al; a-Si solar cells; back reflector; chemically textured ZnO:Al films; front TCO; front contact; high fill factors; high open-circuit voltages; high short-circuit current densities; light-trapping properties; microcrystalline p-layers; n-i-p solar cells; optical properties; p-i-n solar cells; texture etched ZnO:Al films; textured back reflector; Amorphous silicon; Chemicals; Current density; Etching; Optical films; PIN photodiodes; Photovoltaic cells; Semiconductor films; Voltage; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654165