Status of PPI (Pohang Photo-Injector) for PAL XFEL

A X-Ray Free Electron Laser (XFEL) project based on the Self-Amplified Spontaneous Emission (SASE) is under progress at the Pohang Accelerator Laboratory (PAL). One of the critical R&D for the PAL XFEL is to develop the low-emittance injector (named as the Pohang Photo-Injector) with the normalized emittance < 1.2 mm-mrad. In order to achieve the required beam quality with high stability and reliability, we will use photocathode with quantum efficiency > 0.1 % and long lifetime. This will greatly lessen the laser energy requirement for producing flat-top UV pulses, and open the possibility of using only regenerative amplifiers (RGAs) to drive the photocathode RF gun. The RGAs can produce mJs output with much better stability than multi-pass amplifiers. Both the Cs2Te and Mg are under consideration for the possible photo-cathode. To demonstrate the suitability of the Mg and Cs2Te for the future 4th generation light source application, an improved BNL-type S-band RF gun with a high-performance load-lock system will be developed for the PPI. In this article, we present the design concept of the PPI, the expected performance, and report on its development status.