DocumentCode
3204264
Title
Emission-wavelength control using a mechanically stressed micro-beam structure: GaAs on Si-on-insulator beam
Author
Décosterd, Laurent ; Horie, Yu ; Yoshimoto, Kohei ; Suzuki, Ryota ; Cai, Jingnan ; Osaka, Jiro ; Ishikawa, Yasuhiko ; Wada, Kazumi
Author_Institution
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
72
Lastpage
74
Abstract
Mechanically stressed micro-beam structures are proposed to control the emission wavelength for III-V compounds on Si-on-insulator wafers. Based on the calculations for GaAs, the tuning of emission wavelength and the locking from temperature fluctuations are demonstrated by controlling the applied stress.
Keywords
III-V semiconductors; gallium arsenide; optical variables control; silicon; silicon-on-insulator; GaAs; III-V compounds; emission wavelength tuning; emission-wavelength control; mechanically stressed micro-beam structure; silicon-on-insulator beam; Fluctuations; Gallium arsenide; Photonic band gap; Refractive index; Silicon; Strain; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643422
Filename
5643422
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