Title :
The effect of test conditions on the degradation of proton irradiated solar cells
Author :
Wilkinson, V.A. ; Goodbody, C.
Author_Institution :
Space Dept., DERA, Farnborough, UK
fDate :
29 Sep-3 Oct 1997
Abstract :
This paper describes DERA´s proton irradiation facility and reports on progress to date on a programme of experiments to investigate the effect of experimental test conditions, including temperature, illumination, bias and energy spectrum on proton-induced damage in solar cells. Experimental results on GaAs and Si cells in the temperature range -150°C to +150°C are reported and the influence of temperature, bias and illumination on the measured degradation are discussed
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; proton effects; silicon; solar cells; testing; -150 to 150 C; DERA; GaAs; GaAs solar cells; Si; Si solar cells; bias; energy spectrum; illumination; proton irradiated solar cells; proton-induced damage; solar cells; solar cells degradation; temperature; test conditions; Circuits; Degradation; Gallium arsenide; Lighting; Photovoltaic cells; Protons; Silicon; Temperature dependence; Temperature distribution; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654218
