• DocumentCode
    3204431
  • Title

    Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic device integration

  • Author

    McComber, Kevin A. ; Liu, Jifeng ; Michel, Jurgen ; Kimerling, Lionel C.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    57
  • Lastpage
    59
  • Abstract
    This work demonstrates single-crystal germanium deposited by ultra-high vacuum chemical vapor deposition (UHVCVD) on amorphous silicon (a-Si), with all processing performed at temperatures below 450°C. This material shows promise for the successful backend fabrication of photonic devices.
  • Keywords
    chemical vapour deposition; germanium; integrated optics; amorphous silicon; back-end photonic device integration; low-temperature germanium ultra-high vacuum; temperature 450 degC; ultra-high vacuum chemical vapor deposition; Fabrication; Germanium; Photodetectors; Photonics; Silicon; Substrates; Single-crystal germanium; UHVCVD; geometrically-confined lateral growth; grain engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643429
  • Filename
    5643429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3204431