Development of Localized Plasma Confinement (LPC) CVD method for high rate and uniform deposition of thin-film crystalline Si

Author

Matsumoto, Mitsuhiro ; Kawamoto, Kunihiro ; Mishima, Takahiro ; Haku, Hisao ; Shima, Masaki ; Terakawa, Akira ; Tanaka, Makoto

Author_Institution

Adv. Energy Res. Center, Sanyo Electr. Co. Ltd.

Volume

2

fYear

2006

fDate

38838

Firstpage

1580

Lastpage

1583

Abstract

A Localized Plasma Confinement (LPC) CVD method was newly developed. The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films with very high deposition rates and very high gas utilization efficiencies by using LPC-CVD. The maximum deposition rates of 4.1 nm/s for muc-Si and 5.7 nm/s for a-Si have been also achieved. This method is expected to be effective for larger-area deposition

Keywords

elemental semiconductors; high-pressure effects; plasma CVD; semiconductor growth; semiconductor thin films; silicon; 1000 to 2000 Pa; LPC-CVD; Si; cathode; high-pressure conditions; localized plasma confinement CVD; plasma generation; thin-film crystalline silicon; Cathodes; Crystallization; Electrodes; Linear predictive coding; Photovoltaic cells; Plasma confinement; Plasma stability; Semiconductor thin films; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279787

Filename

4059953