DocumentCode
3204468
Title
Integration of optical devices based on Si, Ge and SiOx
Author
Itabashi, S. ; Nishi, H. ; Tsuchizawa, T. ; Watanabe, T. ; Shinojima, H. ; Park, S. ; Yamada, K. ; Ishikawa, Y. ; Wada, K.
Author_Institution
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
48
Lastpage
50
Abstract
Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon photonics practical technology. Applying silicon (Si) photonics to telecommunications further requires low insertion loss and polarization independence. We demonstrate monolithic integration of Si variable optical attenuators, germanium photodiodes, a SiOx-based arrayed waveguide grating filter, and a spot size converter that connects each component with low loss. Moreover, We also show a method for achieving low polarization dependent loss in a Si-VOA. Our results indicate the great potential of silicon photonics technology for optical devices in telecommunications.
Keywords
arrayed waveguide gratings; elemental semiconductors; germanium; integrated optics; light polarisation; monolithic integrated circuits; optical attenuators; optical communication equipment; optical losses; optical waveguide filters; photodiodes; silicon; silicon compounds; Ge; Si; SiOx; arrayed waveguide grating filter; germanium photodiodes; low insertion loss; low polarization dependent loss; monolithic integration; silicon photonics; spot size converter; telecommunication; variable optical attenuators; Optical attenuators; Optical device fabrication; Optical imaging; Optical polarization; Photonics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643430
Filename
5643430
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