Title :
Integration of optical devices based on Si, Ge and SiOx
Author :
Itabashi, S. ; Nishi, H. ; Tsuchizawa, T. ; Watanabe, T. ; Shinojima, H. ; Park, S. ; Yamada, K. ; Ishikawa, Y. ; Wada, K.
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
Abstract :
Monolithic integration of various kinds of optical components on a silicon wafer is the key to making silicon photonics practical technology. Applying silicon (Si) photonics to telecommunications further requires low insertion loss and polarization independence. We demonstrate monolithic integration of Si variable optical attenuators, germanium photodiodes, a SiOx-based arrayed waveguide grating filter, and a spot size converter that connects each component with low loss. Moreover, We also show a method for achieving low polarization dependent loss in a Si-VOA. Our results indicate the great potential of silicon photonics technology for optical devices in telecommunications.
Keywords :
arrayed waveguide gratings; elemental semiconductors; germanium; integrated optics; light polarisation; monolithic integrated circuits; optical attenuators; optical communication equipment; optical losses; optical waveguide filters; photodiodes; silicon; silicon compounds; Ge; Si; SiOx; arrayed waveguide grating filter; germanium photodiodes; low insertion loss; low polarization dependent loss; monolithic integration; silicon photonics; spot size converter; telecommunication; variable optical attenuators; Optical attenuators; Optical device fabrication; Optical imaging; Optical polarization; Photonics; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643430