Title :
High efficiency broadband polarization rotator on silicon-on-insulator
Author :
Vermeulen, D. ; Selvaraja, S. ; Verheyen, P. ; Bogaerts, W. ; Van Thourhout, D. ; Roelkens, G.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium
Abstract :
We demonstrate a polarization rotator fabricated using a 4 etch-step CMOS-compatible process including layer depositions on a silicon-on-insulator wafer by means of 193nm deep UV lithography. The measured polarization rotation efficiency is at least -0.5dB over a wavelength range of 80nm around 1550nm.
Keywords :
CMOS integrated circuits; broadband networks; silicon-on-insulator; ultraviolet lithography; CMOS-compatible process; deep UV lithography; hgh efficiency broadband polarization rotator; layer depositions; silicon-on-insulator; wavelength 193 nm; Couplers; Gratings; Optical crosstalk; Optical device fabrication; Optical polarization; Optical waveguides; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643432
