Title :
Incorporation of Higher-Order Silane Radicals Into A-Si:H Films of High Stability Against Light Exposure
Author :
Shiratani, Masaharu ; Iwashita, Shinya ; Bando, Kouki ; Inoue, Toshihisa ; Koga, Kazunori
Author_Institution :
Graduate Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka
Abstract :
We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si2H5 and Si3H7 densities there
Keywords :
elemental semiconductors; hydrogen; nanoparticles; plasma CVD; semiconductor growth; semiconductor thin films; silicon; silicon compounds; Si:H; Si2H5; Si3H7; higher-order silane radicals; light induced degradation; multihollow discharge plasma CVD; nanoparticles; thin films; Amorphous materials; Degradation; Density measurement; Electrodes; Hydrogen; Inductors; Mass spectroscopy; Plasma measurements; Plasma stability; Semiconductor films;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279791
